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       CDBK0520L-HF SMD Schottky Barrier Diode Page 1 QW-G1095 REV:B 0.144(3.65) 0.136(3.45) 0.024(0.60) Typ. 0.069(1.75) 0.061(1.55) 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) SOD-123F 0.012 (0.30) Typ. 0.057(1.45) Typ. O C unless otherwise noted) Maximum Rating (at TA=25 O C unless otherwise noted) Electrical Characteristics (at TA=25 +125 O C TSTG Min Typ Max Unit IO VR VRM Average forward rectified current Reverse voltage Peak reverse voltage Forward current,surge peak Symbol Parameter Conditions V V A 0.5 20 20 Tj Storage temperature Junction temperature O C +125 -40 IFSM 8.3 ms single half sine-wave superimposed on rate load (JEDEC method) 5.5 A Symbol Min Typ Max Unit Parameter Conditions Forward voltage VF mV Reverse current IR uA 75 a = 25 C O IF = 100mA @T a = 100 C O IF = 500mA @T a = 25 C O IF = 500mA @T a = 100 C O IF = 100mA @T 300 330 385 220 a = 25 O C VR = 20V @T a = 25 O C VR = 10V @T Capacitance between terminals f = 1 MHz, and 0 VDC reverse voltage CT pF 170 Reverse recovery time IF = I R = 10mA, Irr x I R, RL = 100ohm Trr ns 22 250 Features -Low forward voltage. -Designed for mounting on small surface. -Extremely thin / leadless package. -Majority carrier conduction. Mechanical data -Case: SOD-123F standard package, molded plastic. -T erminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking code: cathode band & BM -Mounting position: Any -W eight: 0.011 gram(approx.). Comchip Technology CO., LTD. Io = 500 mA VR = 20 V olts RoHS Device Halogen free |